| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| PL5802B | IC |
Bpowlicom |
SOT23-6 |
25+ |
65468 |
|||
| CD4541BE | IC |
国产品牌 |
DIP14 |
25+ |
1970 |
|||
| AD40N60D5 |
|
N沟道MOS管 |
砹德曼 |
PDNF5*6 |
24+ |
18130 |
||
| AP9N20D |
|
IC |
APM/永源微电子 |
TO252-3L |
24+ |
5000 |
||
| AP85N03DF |
|
IC |
APM/永源微电子 |
PDFN3*3-8L |
24+ |
5000 |
||
| AP70N04NF | MOS(场效应管) |
APM/永源微电子 |
PDFN5X6 |
23+ |
100010 |
|||
| AP6946A | MOS(场效应管) |
APM/永源微电子 |
SOP-8 |
23+ |
45000 |
|||
| AP40P04DF | MOS(场效应管) |
APM/永源微电子 |
DFN3*3 |
23+ |
3000 |
|||
| APC40N10S | MOS(场效应管) |
APM/永源微电子 |
SOP-8 |
23+ |
2000 |
|||
| AP50N06P | MOS(场效应管) |
APM/永源微电子 |
TO-220 |
23+ |
11470 |
|||
| AP50N03P | MOS(场效应管) |
APM/永源微电子 |
TO220-3L |
23 |
5000 |
|||
| AP15P06D | MOS(场效应管) |
APM/永源微电子 |
TO252 |
23+ |
20120 |
|||
| AP60N03NF | MOS(场效应管) |
APM/永源微电子 |
PDFN5*6-8L |
23 |
5000 |
|||
| AP3400MI | MOS(场效应管) |
APM/永源微电子 |
SOT23-3L |
23 |
5000 |
|||
| AP70N03DF | MOS(场效应管) |
APM/永源微电子 |
PDFN3*3-8L |
23 |
5000 |
|||
| APG110N10NF | MOS(场效应管) |
APM/永源微电子 |
DFN5*6-8L |
23+ |
3000 |
|||
| AP10N65F | MOS(场效应管) |
APM/永源微电子 |
TO-220F |
23+ |
5000 |
|||
| AP120N10NF | MOS(场效应管) |
APM/永源微电子 |
DFN5*6-8L |
23+ |
3300 |
|||
| AP60P03DF | MOS(场效应管) |
APM/永源微电子 |
PDFN3X3 |
23+ |
3000 |
|||
| CMS32L051QN40 | 8/16/32位MCU |
CMS中微 |
QFN40 |
24+ |
2755 |
|||
| RUH30120M-C | IC |
RUICHIPS/锐骏 |
PDFN5060 |
23+ |
302000 |
|||
| AD8639WARZ | IC |
ADI/亚德诺 |
SOP8 |
23+ |
11011 |
|||
| RUH4040M3 | IC |
RUICHIPS/锐骏 |
DFN3030 |
23+ |
20010 |
|||
| MMBT2907ALT1G | IC |
ONSEMI/安森美 |
SOT23 |
23+ |
45050 |
|||
| PL56001 | IC |
Bpowlicom/宝砾微 |
QFN4*4-20 |
23+ |
3640 |
|||
| SIF4N60F-TO-220F | IC |
SI/深爱 |
TO-220F |
23+ |
1990 |
|||
| S4120MTB | IC |
BPS/晶丰明源 |
SOT23-6 |
23+ |
2000 |
|||
| RU3030M2 | IC |
RUICHIPS/锐骏 |
PDFN3333 |
23+ |
5091 |
|||
| LYF95101A | IC |
Bpowlicom |
SOT23-6 |
23+ |
3000 |
|||
| MST2513ASF | IC |
MST迈尔斯通 |
SOT23-6 |
23+ |
1480 |