型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
---|---|---|---|---|---|---|---|---|
BAT32G133GC24NA | 8/16/32位MCU |
CMSEMICON/中微 |
QFN24 |
23+ |
5000 |
|||
LT7409FL |
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MOS(场效应管) |
LEADTECK/领泰 |
QFN33*33 |
23+ |
8040 |
||
CMS80F262A | 8/16/32位MCU |
CMS中微 |
LQPF44 |
23+ |
1605 |
|||
CMS8S5887-TSSOP20 | 8/16/32位MCU |
CMS中微 |
TSSOP20 |
23+ |
38890 |
|||
CMS32L051TS20 | 8/16/32位MCU |
CMS中微 |
TSSOP20 |
23+ |
4771 |
|||
CMS80F2619-LQFP32 |
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8/16/32位MCU |
CMS中微 |
LQF32 |
23+ |
2025 |
||
CMS3960-ESOP | 8/16/32位MCU |
CMS中微 |
ESOP |
23+ |
5000 |
|||
LT2203FL-Y | MOS(场效应管) |
LEADTECK/领泰 |
DFN3*3-8L |
23+ |
2000 |
|||
LT1632SR-Y | MOS(场效应管) |
LEADTECK/领泰 |
TO-252 |
23+ |
1000 |
|||
LT2004EDN-X | MOS(场效应管) |
LEADTECK/领泰 |
DFN-2X3 |
23+ |
12050 |
|||
LTS1534FJ-H | MOS(场效应管) |
LEADTECK/领泰 |
QFN5*6 |
23+ |
2000 |
|||
LTS1006FJ-Y |
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MOS(场效应管) |
LEADTECK/领泰 |
QFN5*6 |
23+ |
1500 |
||
LTS7904FJ |
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MOS(场效应管) |
LEADTECK/领泰 |
DFN5*6-8L |
23+ |
3000 |
||
LT40P68FJ | MOS(场效应管) |
LEADTECK/领泰 |
DFN5*6-8L |
23+ |
9000 |
|||
LT4422EFL | MOS(场效应管) |
LEADTECK/领泰 |
DFN3*3-8L |
23+ |
2000 |
|||
LTS3818F12 | MOS(场效应管) |
LEADTECK/领泰 |
TDFN3X3-8L |
23+ |
6000 |
|||
LT7408FJ | MOS(场效应管) |
LEADTECK/领泰 |
DFN5*6-8L |
23+ |
40000 |
|||
LTS1010SR | MOS(场效应管) |
LEADTECK/领泰 |
TO252 |
23+ |
25010 |
|||
LTS8010TK-H |
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MOS(场效应管) |
LEADTECK/领泰 |
TO263 |
23+ |
32020 |
||
LTS0123TK | MOS(场效应管) |
LEADTECK/领泰 |
TO263-2L |
23+ |
10000 |
|||
FT32F072R8AT7 | IC |
FMD/辉芒微 |
LQFP64 |
24+ |
20000 |
|||
FT32F030C8BU7 | IC |
FMD/辉芒微 |
QFN48 |
24+ |
20000 |
|||
FT32F030K8BU7 | IC |
FMD/辉芒微 |
QFN32 |
24+ |
20000 |
|||
FT32F032G8BS7 | IC |
FMD/辉芒微 |
SOP28 |
24+ |
20000 |
|||
FT32F030K6BT7 | IC |
FMD/辉芒微 |
LQFP32 |
24+ |
20000 |
|||
FT32F030K6AT7 | IC |
FMD/辉芒微 |
LQFP32 |
24+ |
20000 |
|||
SWM166D8U6-40 | IC |
华芯微特 |
QFN40 |
24+ |
5000 |
|||
MX25L6406EM2I-12G |
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IC |
MX25L6406EM2I-12G 代替新品价格0.8元技术 |
SOP |
24+ |
2229880 |
||
SC8F073AD720NPR | IC |
中微CMS |
QFN20 |
25+ |
16870 |
|||
PT4557FEASG | IC |
PowTech/华润矽威 |
SOP8 |
23+ |
4850 |